The TOSHIBA TLP785 consists of a silicone phototransistor optically coupled to a gallium arsenide (GaAs) infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage(AC: 5kVRMS (min)).
TLP785F is a lead forming type for the long creepage surface mounting of TLP785.
? TLP785: 7.62mm pitch type DIP4
? TLP785F: 10.16mm pitch type DIP4
? Collector-emitter voltage: 80V (min)
? Current transfer ratio: 50% (min)
? ? ? ? ? ? ? ? ? ? Rank GB: 100% (min)
? Isolation voltage: 5000Vrms (min)
? UL approved: UL1577, file No. E67349
? BSI under application: BS EN60065:2002
? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?BS EN60950-1:2006
? SEMKO under application:EN60065:2002
? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?EN60950-1:2001, EN60335-1:2002
? Option(D4)type
VDE approved: DIN EN60747-5-2
(Note): When an EN60747-5-2 approved type is needed,Please designate “Option (D4)”
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Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.