Description
The Broadcom? HCPL-181 contains a light-emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin mini-flat SMD package with a 2.0-mm profile. The small dimension of this product allows significant space saving.
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Description
The ACPL-227 is a DC-input dual-channel half-pitch phototransistor optocoupler that contains two light-emitting diodes optically coupled to two separate phototransistors. It is packaged in an 8-pin SO package.
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Description
The ACPL-217 is a DC-input single-channel half-pitch phototransistor optocoupler that contains a light-emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin SO package.
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Description
The ACPL-827 is a DC-input dual-channel, full-pitch phototransistor optocoupler that contains two light emitting diodes optically coupled to two separate transistors. It is packaged in an 8-pin DIP package.
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Description
The Broadcom? HCPL-817 contains a light-emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin DIP package and available in wide-lead spacing option and lead bend SMD option. Input-output isolation voltage is 5000 Vrms. Response time, tr, is typically 4 μs and minimum CTR is 50% at input current of 5 mA.
Description
The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
DESCRIPTION
The MOC8100, TIL111 and TIL117 optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
Description
The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
DESCRIPTION
The MOC8100, TIL111 and TIL117 optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
Description
The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
DESCRIPTION
The MOC8100, TIL111 and TIL117 optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
DESCRIPTION
The MOC306X-M and MOC316X-M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
DESCRIPTION
The MOC306X-M and MOC316X-M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver.
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
DESCRIPTION
The MOC3051-M and MOC3052-M consist of a AlGaAs infrared emitting diode optically coupled to a non-zero-crossing silicon bilateral AC switch (triac).