DESCRIPTION
The MOCD211-M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.
FEATURES
? U.L. Recognized (File #E90700, Volume 2)
? VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD211V-M)
? Minimum BVCEO of 30 Volts Guaranteed
? Standard SOIC-8 Footprint, with 0.050" Lead Spacing
? Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
? High Input-Output Isolation of 2500 VAC(rms) Guaranteed
? Compact Dual Channel Optocoupler
APPLICATIONS
? Interfacing and coupling systems of different potentials and impedances
? General purpose switching circuits
? Monitor and detection circuits
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Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.